SSF3416 d g s description the SSF3416 uses advanced trench technology to provide excellent r ds(on) and low gate charge .this device is suitable for use as a load switch or in pwm applications. schematic diagram package marking and ordering information device marking device device package reel size tape width quantity 3416 SSF3416 sot23-6 ?180mm 8mm 3000 units absolute maximum ratings(ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v i d 25 9 i d 70 7 a drain current-continuous@ current-pulsed (note 1) i dm 40 a maximum power dissipation p d 2.5 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 62.5 /w electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 30 v general features v = 30v,i ds d =9a r < 30m ? @ v ds(on) gs =4.5v r < 18.5m ? @ v ds(on) gs =10v high power and current handing capability lead free product is acquired surface mount package markin g and pin assi g nment application pwm applications load switch power management sot23-6 to p view ?silikron semiconductor co.,ltd. 1 http://www.silikron.com v1.0
SSF3416 zero gate voltage drain current i v =30v,v =0v 1 a dss ds gs gate-body leakage current i v =20v,v =0v 100 na gss gs ds on characteristics (note 3) gate threshold voltage v v =v gs(th) ds gs ,i d =250 a 1 1.9 3 v v =4.5v, i gs d =7a 21 30 m ? drain-source on-state resistance r ds(on) v =10v, i gs d =9a 16 18.5 m ? forward transconductance g v =15v,i fs ds d =9a 10 s dynamic characteristics (note4) input capacitance c 600 pf lss output capacitance c oss 75 pf v =15v,v reverse transfer capacitance c rss ds gs =0v, f=1.0mhz 45 pf switching characteristics (note 4) turn-on delay time t 4 ns d(on) turn-on rise time t 12 ns r turn-off delay time t d(off) 22 ns v =15v,v =10v,r turn-off fall time t f ds gs gen =6 ? i d =1a 4 ns total gate charge q 12 nc g gate-source charge q gs 1.2 nc v =15v,i gate-drain charge q gd ds d =9a,v gs =10v 3.8 nc body diode reverse recovery time t 13 ns rr i f =9a, di/dt=100a/s 7 nc body diode reverse recovery charge q rr drain-source diode characteristics diode forward voltage (note 3) v v =0v,i =3a 0.7 1.2 v sd gs s notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on 1in 2 fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production testing. ?silikron semiconductor co.,ltd. 2 http://www.silikron.com v1.0
SSF3416 typical electrical and th ermal characteristics figure 3 power dissipation t j -junction temperature( ) p d power(w) i d - drain current (a) vds drain-source voltage (v) figure 5 output characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms d - drain current (a i t j -junction temperature( ) figure 4 drain current rdson on-resistance(m ) i d - drain current (a) figure 6 drain-source on-resistance ?silikron semiconductor co.,ltd. 3 http://www.silikron.com v1.0
SSF3416 normalized on-resistance d - drain current (a) i vgs gate-source voltage (v) t j -junction temperature( ) figure 7 transfer characteristics figure 8 drain-source on-resistance vgs gate-source voltage (v) qg gate charge (nc) figure 11 gate charge c capacitance (pf) figure 10 capacitance vs vds vds drain-source voltage (v) figure 9 rdson vs vgs rdson on-resistance(m ) vgs gate-source voltage (v) s - reverse drain current (a) i vsd source-drain voltage (v) figure 12 source- drain diode forward ?silikron semiconductor co.,ltd. 4 http://www.silikron.com v1.0
SSF3416 d - drain current (a) i vds drain-source voltage (v) figure 13 safe operation area thja normalized transient t h e rmal r esi st an ce z square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance ?silikron semiconductor co.,ltd. 5 http://www.silikron.com v1.0
SSF3416 sot23-6 package information dimensions in millimeters (unit:mm) notes 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ?silikron semiconductor co.,ltd. 6 http://www.silikron.com v1.0
SSF3416 attention: any and all silikron products described or contained herein do not have specifications that c an handle applications that requ ire extremely high levels of reliability, such as life-support system s, aircraft's control systems, or other applications whose fai lure can be reasonably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using an y silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sili kron products described or contained herein. specifications of any and all silikron products described or c ontained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer?s products or equipment. silikron semiconductor co.,ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that c ould give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, an d structural design. in the event that any or all silikron products(including te chnical data, services) described or contained herein are controll ed under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, et c. when designing equipment, re fer to the "delivery specificat ion" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specific ations and information herein are subject to change without notice . ?silikron semiconductor co.,ltd. 7 http://www.silikron.com v1.0
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